作者：Bumjoon Kim;Kwangtaek Lee;Samseok Jang;Seungjae Lee;Jonghyeob Baek;Youngmoon Yu;Jaesang Lee;Dongjin Byun;Junggeun Jhin;

作者单位：Department of Materials Science and Engineering, Korea University 5 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea);Department of Materials Science and Engineering, Korea University 5 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea);Department of Materials Sci

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：40911

起页：80

止页：84

分类号：TQ175

语种：英文

关键词：Epitaxial lateral overgrowth;Gallium nitride;Ion implantation;MOCVD;

内容简介

An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, Nt ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the Nt ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.