作者：Cornuz, M.;Gr?tzel, M.;Sivula, K.;

作者单位：Institut des Sciences et Ingénierie Chimiques, ?cole Polytechnique Fédérale, Lausanne CH-1015 Lausanne, Switzerland;Institut des Sciences et Ingénierie Chimiques, ?cole Polytechnique Fédérale, Lausanne CH-1015 Lausanne, Switzerland;Institut des Sciences e

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41194

起页：291

止页：295

分类号：TQ175

语种：英文

关键词：

内容简介

The state-of-the-art performance, obtained through the reduction of precursor gas residence time in hematite photoanodes produced by APCVD, is explained in this report by an enhanced preferential orientation of the highly conductive crystal planes perpendicular to the electron-collecting substrate.