作者：Shimada, M.;Wang, W.-N.;Okuyama, K.;

作者单位：Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University 1-4-1, Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan;Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University 1-4-1, Kagam

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41005

起页：151

止页：156

分类号：TQ175

语种：英文

关键词：Gas-phase synthesis;III-V materials;Light-emitting diode;Monodispersed particles;Semiconductor;

内容简介

Gallium nitride (GaN) nanoparticles are successfully synthesized via an improved microwave plasma-enhanced (MPE)CVD method. Optimization of the MPECVD process is achieved by manipulating the plasma operating conditions, such as antenna length, input power, and pressure. The resulting GaN nanoparticles have an average size of around 8.5nm with a very narrow size distribution, indicating that well-dispersed nanoparticles can be obtained, due to the negative charge of the particles caused by the collision of electrons in the plasma process. In addition, a satisfactory stoichiometric ratio, high crystallinity, and relatively good photoluminescence (PL) properties of the GaN nanoparticles are achieved, due to the improved process.