作者：Brewer, J.R.;Gernhart, Z.;Liu, H.-Y.;Cheung, C.L.;

作者单位：Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0304, United States;School of Science, Buena Vista University, Storm Lake, IA 50588, United States;Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41099

起页：216

止页：219

分类号：TQ175

语种：英文

关键词：

内容简介

Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. Xray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°.