作者：Park, KT;Um, HD;Jee, SW;Jung, JY;Park, YC;Yang, JM;Lee, JH;

作者单位：Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Natl Nanofab Ctr, Measureme

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2008-01-05

卷：14

期：41225

起页：331

止页：333

分类号：TQ175

语种：英文

关键词：QUANTUM DOTS;VISIBLE PHOTOLUMINESCENCE;IMPLANTED SIO2-FILMS;GE NANOWIRES;NANOCRYSTALS;OXIDATION;GERMANIUM;EMISSION;RAMAN;

内容简介

Freestanding Ge/SiO2 core/shell nanoparticles were synthesized via metastable SiO2 hollow nanospheres by atmospheric-pressure thermal chemical Vapor deposition (APCVD) using SiCl4 and GeCl4 source gases. The Ge-core and. SiO2-shell thicknesses could be controlled by adjusting the annealing time and the source gas ratio. These-nanoparticles might be useful as labeling markers for fluorescent applications.