作者：Niu, JJ;Wang, JN;

作者单位：Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2007-01-05

卷：13

期：8

起页：396

止页：400

分类号：TQ175

语种：英文

关键词：crystal growth;high purity;Si3N4 nanowires;NITRIDE NANOWIRES;CARBOTHERMAL REDUCTION;ALPHA-SI3N4;SI3N4;WHISKERS;FIBERS;EVAPORATION;NANOCABLES;SCATTERING;RAMAN;

内容简介

Bundles of single-crystalline beta-Si3N4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The beta-Si3N4 NWs obtained have a small diameter of similar to 30 nm, a single-crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue-shift of the peaks in Raman scattering compared to bulk beta-Si3N4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template-assisted growth model is suggested.