作者：Pearton, S.J.;Polyakov, A.Y.;

作者单位：Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, United States;Institute of Rare Metals, B. Tolmachevsky, 5, 119017, Moscow, Russian Federation

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41194

起页：266

止页：274

分类号：TQ175

语种：英文

关键词：Aluminum gallium nitride;Gallium nitride;Hydrogen;

内容简介

Hydrogen is an important component of the gas-phase growth chemistry for GaN, which is typically based on NH_3 and (CH_3) _3Ga, and also the processing environment for subsequent device fabrication (e.g., SiH_4 for dielectric deposition, NH_3 or H_2 annealing ambients), and is found to readily permeate heteroepitaxial material at temperatures acircdeg C. Its main effect has been the passivation of Mg acceptors in p-GaN through the formation of neutral Mg-H complexes, which can be dissociated through minority-carrier (electron) injection or simple thermal annealing. Atomic hydrogen is also found to passivate a variety of other species in GaN, as detected by a change in the electrical or optical properties of the material. The injection of hydrogen during a large variety of device fabrication steps has been detected by secondary ion mass sprectrometry (SIMS) profiling using bsupesup H isotopic labeling. Basically all of the acceptor species in GaN, i.e., Mg, C, Ca, and Cd, are found to form complexes with hydrogen. Hydrogen plays an important role in the CVD growth of the wide bandgap GaN and AlGaN materials system and also in the subsequent processing of these semiconductors. It diffuses rapidly in these materials even at quite low temperatures and can profoundly affect the electrical properties. A review is given of the present understanding of hydrogen in the wide bandgap nitrides.