作者：Devi, A.;Hellwig, M.;Barreca, D.;Parala, H.;Thomas, R.;Becker, H.-W.;Katiyar, R.S.;Fischer, R.A.;Tondello, E.;

作者单位：Inorganic Materials Chemistry, Lehrstuhl für Anorganische Chemie II, Ruhr-University Bochum Universitátsstr. 150, D-44780, Bochum, Germany;Inorganic Materials Chemistry, Lehrstuhl für Anorganische Chemie II, Ruhr-University Bochum Universitátsstr. 150, D-

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41005

起页：157

止页：165

分类号：TQ175

语种：英文

关键词：High-k oxides;LI-MOCVD;Precursor chemistry;Thin films;Ti-Ta-O;

内容简介

Titanium oxide (TiO2) and titanium-tantalum oxide (Ti-Ta-O) thin films are deposited by liquid injection (LI) metal-organic (MO) CVD using metal amide-malonate complexes, [Ti(NR_2)_2 (dbml) _2], and tantalum, [Ta(NMe_2)_2 (dbml)] (R Me, Et; dbml di-tert-butylmalonato). TiO_2 and Ti-Ta-O films are deposited on Si(100) in the temperature ranges 350-650°C and 500-700°C, respectively. The structure, morphology, and chemical composition of the films are evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), and X-ray photoelectron spectroscopy (XPS). The electrical properties of the films, namely the dielectric properties, are assessed by carrying out capacitance-voltage (C-V) measurements on metal-oxide-semiconductor (MOS) capacitor structures.