作者：Wrobel, A.M.;Blaszczyk-Lezak, I.;Uznanski, P.;Glebocki, B.;

作者单位：Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz, Poland;Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz, Poland;Centre of Molecular a

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41099

起页：211

止页：215

分类号：TQ175

语种：英文

关键词：

内容简介

SiCN films were produced by remote microwave hydrogen plasma CVD (RP-CVD) from tris(dimethylamino)silane precursor using different substrate temperature in the range T_S=30-400°C. The effect of T_S on the rate of RP-CVD, chemical structure, surface morphology, density, and photoluminescence (PL) of resulting films is reported. The increase in TS causes the formation of silicon carbonitride network, marked densification and smoothening of film surface, as well as shift of PL peak position.