作者：HAYATO NANRI;KOJI WATANABE;

作者单位：Taiko Refractories Co., Ltd. 1-1, Makiyama-Shinmachi, Tobata-ku, Kitakyushu 804-0054

刊名：Taikabutsu Overseas

ISSN：0285-0028

出版年：2002-01-05

卷：22

期：2

起页：74

止页：79

分类号：TQ175

语种：英文

关键词：

内容简介

Repeated cycles of heat treatment at 1400 deg C caused SiC covered with cristobalite, which had formed through oxidation at 1400 deg C for 3 hours in the air, to lose its mass and the crystallinity of the cristobalite to degrade. The correlation between the mass loss and the number of heating cycles changed with the crystallinity of cristobalite. It was quadratical when the cristobalite exhibited a high degree of crystallinity the rate of mass loss per heating cycle was initially small but became larger as the number of cycles increased. On the other hand, the correlation was almost linear when the crystoballite exhibited a low degree of crystallinity the rate of mass loss per heating cycle was constant in both earlier and later heating cycles. We inferred that the main cause of these mass loss behaviors was the formation of volatile SiO through a solid state reaction between SiC and SiO_2.